BD9007F-E2 Rohm Semiconductor, BD9007F-E2 Datasheet - Page 15

IC REG SW 2A FLEX STEPDOWN 8-SOP

BD9007F-E2

Manufacturer Part Number
BD9007F-E2
Description
IC REG SW 2A FLEX STEPDOWN 8-SOP
Manufacturer
Rohm Semiconductor
Type
Step-Down (Buck)r
Datasheet

Specifications of BD9007F-E2

Internal Switch(s)
Yes
Synchronous Rectifier
No
Number Of Outputs
1
Voltage - Output
1 ~ 35 V
Current - Output
2A
Frequency - Switching
50kHz ~ 500kHz
Voltage - Input
7 ~ 35 V
Operating Temperature
-40°C ~ 105°C
Mounting Type
Surface Mount
Package / Case
8-SOP
Power - Output
690mW
Output Voltage
2. 6 V
Output Current
2 A
Input Voltage
7 V to 35 V
Operating Temperature Range
- 40 C to + 105 C
Mounting Style
SMD/SMT
Duty Cycle (max)
100 %
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BD9007F-E2TR
●Notes for use
BD9006F, BD9006HFP, BD9007F, BD9007HFP
© 2009 ROHM Co., Ltd. All rights reserved.
SYNC
www.rohm.com
EN/
SW
1. Absolute maximum ratings
2. GND potential
3. Thermal design
4. Inter-pin shorts and mounting errors
5. Operation in strong electromagnetic field
6. Inspection with set printed circuit board
7. IC pin input (Fig. 26)
EN/SYNC
SW
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC’s power supply off before connecting it to, or
removing it from a jig or fixture, during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting and storing the IC.
If excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break
down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated
values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
Ground-GND potential should maintain at the minimum ground voltage level. Furthermore, no terminals should be lower
than the GND potential voltage including electric transients.
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
When attaching to the set substrate, pay special attention to the direction and proper placement of the IC. If the IC is attached
incorrectly, it may be destroyed.
Furthermore, when using the IC with VIN and EN/SYNC terminals shorted, and the 5-pin (SOP8 package) or 7-pin (HRP7
package) EN/SYNC terminal and 6-pin RT terminal are shorted, the IC may also be damaged when VIN>7V.
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements to keep them isolated. P-N
junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic, creating
a parasitic diode or transistor. For example, the relation between each potential is as follows:
・When GND>pin A and GND>pin B, the P-N junction operates as a parasitic diode.
・When pin B >GND>pin A, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitably in
the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational
faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is
lower than the GND (P substrate) voltage to an input pin, should not be used.
V
V
IN
IN
145
222
kΩ
kΩ
P Substrate
(Terminal A)
V
IN
221
139
kΩ
kΩ
Resistor
60kΩ
Parasitic Element
RT
Fig.29 Typical simple construction of monolithic IC
Internal Power
RT
(Terminal B)
Fig.28 Equivalent circuit
V
Parasitic Element
IN
167kΩ
Internal Power
Transistor (NPN)
15/17
P Substrate
FB
FB
V
IN
1kΩ
(Terminal B)
(Terminal A)
INV
INV
1kΩ
V
20Ω
Parasitic Element
IN
Parasitic Element
Internal Power
1kΩ
Internal Power
Technical Note
2009.05 - Rev.A

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