TCET4100 Vishay, TCET4100 Datasheet - Page 2

OPTOCP PHOTOTRANS 4CH 600% 16DIP

TCET4100

Manufacturer Part Number
TCET4100
Description
OPTOCP PHOTOTRANS 4CH 600% 16DIP
Manufacturer
Vishay
Datasheet

Specifications of TCET4100

Mounting Type
Through Hole
Isolation Voltage
5000 Vrms
Number Of Channels
4
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
300mV
Output Type
Transistor
Package / Case
16-DIP (0.300", 7.62mm)
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor
Configuration
4
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
300 mV
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
265 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
No. Of Channels
4
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
16
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1371-5
TCET4100
TCET2100 / TCET4100
Vishay Semiconductors
Absolute Maximum Ratings
T
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Electrical Characteristics
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
www.vishay.com
2
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature
range
Storage temperature range
Soldering temperature
Forward voltage
Junction capacitance
Collector emitter voltage
Emitter collector voltage
Collector-emitter cut-off current
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
Parameter
t
t
t = 1 min
2 mm from case t ≤ 10 s
I
V
I
I
V
p
p
F
C
E
R
CE
/T = 0.5, t
≤ 10 µs
= ± 50 mA
= 100 µA
= 1 mA
= 0 V, f = 1 MHz
= 20 V, I
Test condition
Test condition
Test condition
Test condition
Test condition
p
≤ 10 ms
f
= 0, E = 0
Symbol
Symbol
V
V
I
CEO
V
CEO
ECO
C
F
j
Symbol
Symbol
Symbol
V
V
P
P
T
I
V
T
I
P
T
FSM
V
CEO
ECO
CM
amb
T
I
T
I
diss
diss
ISO
stg
sld
F
C
tot
R
j
j
Min
Min
70
7
- 40 to + 100
- 55 to + 125
Value
Value
Value
5000
1.25
Typ.
Typ.
100
125
100
150
125
250
260
1.5
60
70
50
50
10
6
7
Document Number 83727
Max
Max
100
1.6
Rev. 1.4, 26-Oct-04
V
Unit
mW
Unit
mW
Unit
mW
mA
mA
mA
°C
°C
°C
°C
°C
RMS
V
A
V
V
Unit
Unit
pF
nA
V
V
V

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