TCET4100 Vishay, TCET4100 Datasheet - Page 3

• Manufacturer Part Number: TCET4100
• Description: OPTOCP PHOTOTRANS 4CH 600% 16DIP
• Manufacturer: Vishay

Specifications of TCET4100

• Mounting Type: Through Hole
• Isolation Voltage: 5000 Vrms
• Number Of Channels: 4
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 50% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Output Type: Transistor
• Package / Case: 16-DIP (0.300", 7.62mm)
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 4
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 4
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1371-5; TCET4100

Coupler
Current Transfer Ratio
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
Input
Output
Coupler
Insulation Rated Parameters
Document Number 83727
Rev. 1.4, 26-Oct-04
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Collector emitter saturation
voltage
Cut-off frequency
Coupling capacitance
I
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
Insulation resistance
C
/I
F
Parameter
Parameter
Parameter
Parameter
Parameter
Parameter
I
V
R
f = 1 MHz
V
100 %, t
t
(see figure 2)
V
V
V
(construction test only)
F
Tr
CE
CE
IO
IO
IO
L
= 10 mA, I
= 60 s, t
= 100 Ω
= 500 V
= 500 V, T
= 500 V, T
= 5 V, I
= 5 V, I
test
Test condition
Test condition
Test condition
Test condition
Test condition
Test condition
test
F
F
= 1 s
C
= 10 mA,
= 5 mA
= 10 s,
amb
amb
= 1 mA
= 100 °C
= 150 °C
Symbol
Symbol
Symbol
Symbol
Symbol
Symbol
V
V
V
P
CTR
CEsat
V
V
R
R
R
IOTM
IOTM
C
T
f
I
diss
F
pd
pd
c
IO
IO
IO
si
k
TCET2100 / TCET4100
10
10
Min
Min
Min
Min
Min
Min
10
1.6
1.3
50
8
12
11
9
Vishay Semiconductors
Typ.
110
Typ.
Typ.
Typ.
Typ.
Typ.
0.3
Max
Max
Max
Max
Max
Max
600
130
265
150
0.3
8
www.vishay.com
Unit
kHz
Unit
Unit
Unit
mW
Unit
Unit
mA
pF
kV
kV
kV
kV
°C
%
Ω
Ω
Ω
V
3