SMS01GDFB5E NUMONYX, SMS01GDFB5E Datasheet - Page 8
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SMS01GDFB5E
Manufacturer Part Number
SMS01GDFB5E
Description
MICROSD CARD SMS 1GB FLASH MEM
Manufacturer
NUMONYX
Datasheet
1.SMS512DFA5E.pdf
(60 pages)
Specifications of SMS01GDFB5E
Memory Size
1GB
Memory Type
SD (Secure Digital)
Operating Supply Voltage (typ)
3.3V
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description
8/60
Table 3.
1. T
Table 4.
1. NA = not applicable; RH = relative humidity; ESD = electrostatic discharge
Table 5.
Table 6.
1. MTBF = mean time between failures.
Standby
Read
Write
Temperature
Humidity (non-condensing)
ESD
protection
Salt water spray
Vibration (peak-to-peak)
Shock
Drop
Bending
UV light exposure
Width
Height
Thickness
Weight
Number of pins
Preventive maintenance
Data reliability
A
= 25 °C, V
Environmental
specifications
Parameter
Power consumption
Environmental specifications
Physical dimensions
System reliability and maintenance
Contact pads
DD
= 3.6 V.
Other
Mode
MTBF
Operating
− 25 °C to
(1)
85 °C
NA
NA
NA
NA
NA
NA
Inter connect area 0.7±0.1
(1)
Max. card thickness 0.95
Max. pull area 1.0±0.1
MicroSD
±15 kV (air discharge) human body model per
(1)
15
<1
T
11
8
A
±4 kV, human body model according to
= 35 °C 3% NaCl (MIL Std method 1009)
±
8 kV (coupling plane discharge)
ANSI EOS/ESD-S5.1-1998
None
1 non-recoverable bit in 10
20N (middle of the card)
20N (border of the card)
254 nm, 15 Ws/cm
Max. current consumption
− 40 °C to 85 °C
85 °C - 85% RH
Non-operating
IEC61000-4-2
15 Gmax
1,000G
2000G
>1,000,000 hrs
40 mA
40 mA
60 µA
2
Unit
mm
mm
mm
N/A
g
14
SMSxxxDF
bit read