SMS01GDFB5E NUMONYX, SMS01GDFB5E Datasheet - Page 8

• Manufacturer Part Number: SMS01GDFB5E
• Description: MICROSD CARD SMS 1GB FLASH MEM
• Manufacturer: NUMONYX

Specifications of SMS01GDFB5E

• Memory Size: 1GB
• Memory Type: SD (Secure Digital)
• Operating Supply Voltage (typ): 3.3V
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Description
8/60
Table 3.
1. T
Table 4.
1. NA = not applicable; RH = relative humidity; ESD = electrostatic discharge
Table 5.
Table 6.
1. MTBF = mean time between failures.
Standby
Read
Write
Temperature
Humidity (non-condensing)
ESD
protection
Salt water spray
Vibration (peak-to-peak)
Shock
Drop
Bending
UV light exposure
Width
Height
Thickness
Weight
Number of pins
Preventive maintenance
Data reliability
A
= 25 °C, V
Environmental
specifications
Parameter
Power consumption
Environmental specifications
Physical dimensions
System reliability and maintenance
Contact pads
DD
= 3.6 V.
Other
Mode
MTBF
Operating
− 25 °C to
(1)
85 °C
NA
NA
NA
NA
NA
NA
Inter connect area 0.7±0.1
(1)
Max. card thickness 0.95
Max. pull area 1.0±0.1
MicroSD
±15 kV (air discharge) human body model per
(1)
15
<1
T
11
8
A
±4 kV, human body model according to
= 35 °C 3% NaCl (MIL Std method 1009)
±
8 kV (coupling plane discharge)
ANSI EOS/ESD-S5.1-1998
None
1 non-recoverable bit in 10
20N (middle of the card)
20N (border of the card)
254 nm, 15 Ws/cm
Max. current consumption
− 40 °C to 85 °C
85 °C - 85% RH
Non-operating
IEC61000-4-2
15 Gmax
1,000G
2000G
>1,000,000 hrs
40 mA
40 mA
60 µA
2
Unit
mm
mm
mm
N/A
g
14
SMSxxxDF
bit read