MT18VDDF6472DY-335G2 Micron Technology Inc, MT18VDDF6472DY-335G2 Datasheet - Page 13

• Manufacturer Part Number: MT18VDDF6472DY-335G2
• Description: MODULE DDR 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF6472DY-335G2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 600ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.611A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 18–20; 0°C
Table 10: AC Input Operating Conditions
Notes: 1–5, 14, 48; notes appear on pages 18–20; 0°C
pdf: 09005aef80f6b913, source: 09005aef80f6b41c
DDAF18C64_128x72G.fm - Rev. C 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V
1.35V (All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to V
Relative to V
OUT
OUT
REF
DD
DD
V
IN
= 0.373V, maximum V
SS
SS
SS
Q Supply
= V
Supply
and Inputs
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
V
DD
DD
V
Q - 0.373V, minimum V
, V
OUT
REF
pin 0V
V
DD
Q)
REF
V
IN
, maximum V
REF
Command/
Address, RAS#,
CAS#, WE#, S#,
CKE
CK, CK#
DQ, DQS
SYMBOL
, minimum V
V
V
V
T
REF
IH
IL
A
(
(
AC
(
TT
AC
T
AC
+70°C
A
)
)
)
)
+70°C; V
13
TT
512MB, 1GB (x72, ECC, SR) PC3200
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
V
0.49
SYMBOL
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
V
V
REF
DD
V
IH
V
IL
V
V
I
I
I
Relative to V
T
DDQ
MIN
OH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OZ
OL
, V
REF
(DC)
(DC)
I
DD
TT
X
184-PIN DDR SDRAM RDIMM
+ 0.310
A
I
–
V
DD
(ambient) . . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
DD
Q = +2.6V ±0.1V
Q
0.49
V
V
REF
REF
-16.8
MIN
16.8
-0.3
-10
2.5
2.5
X
-5
-5
+ 0.15
0.51
- 0.04 V
V
SS
V
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51
X
- 0.310
–
V
V
DD
V
REF
REF
DD
MAX
Q
2.7
2.7
10
X
+ 0.04
5
5
–
–
- 0.15
©2004 Micron Technology, Inc. All rights reserved.
+ 0.3
V
DD
UNITS
Q
V
V
V
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
12, 25, 35
12, 25, 35
NOTES
DD
32, 36, 39
NOTES
32, 36
33, 34
6
Q +0.5V
6, 39
7, 39
25
25
47
47