MT16VDDF12864HY-40BD2 Micron Technology Inc, MT16VDDF12864HY-40BD2 Datasheet - Page 18

• Manufacturer Part Number: MT16VDDF12864HY-40BD2
• Description: MODULE SDRAM DDR 1GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDF12864HY-40BD2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes
pdf: 09005aef80b57837, source: 09005aef80b577fa
DDAF16C64_128x64HG.fm - Rev. D 9/04 EN
10. I
11. This parameter is sampled. V
1. All voltages referenced to V
2. Tests for AC timing, I
3. Outputs measured with equivalent load:
4. AC timing and I
5. The AC and DC input level specifications are as
6. V
7. V
8. I
9. Enables on-chip refresh and address counters.
characteristics may be conducted at nominal ref-
erence/supply voltage levels, but the related spec-
ifications and device operation are guaranteed for
the full voltage range specified.
swing of up to 1.5V in the test environment, but
input timing is still referenced to V
crossing point for CK/CK#), and parameter speci-
fications are guaranteed for the specified AC input
levels under normal use conditions. The mini-
mum slew rate for the input signals used to test
the device is 1V/ns in the range between V
and V
defined in the SSTL_2 Standard (i.e., the receiver
will effectively switch as a result of the signal
crossing the AC input level, and will remain in that
state as long as the signal does not ring back
above [below] the DC input LOW [HIGH] level).
ting device and to track variations in the DC level
of the same. Peak-to-peak noise (non-common
mode) on V
DC value. Thus, from V
±25mV for DC error and an additional ±25mV for
AC noise. This measurement is to be taken at the
nearest V
system supply for signal termination resistors, is
expected to be set equal to V
variations in the DC level of V
rates. Specified values are obtained with mini-
mum cycle time at CL = 3 for -40B with the out-
puts open.
properly initialized, and is averaged at the defined
cycle rate.
V
DD
DD
REF
TT
DD
Q = +2.5V ±0.2V, V
is not applied directly to the device. V
is dependent on output loading and cycle
specifications are tested after the device is
is expected to equal V
IH
(AC).
REF
Output
(V
REF
OUT
bypass capacitor.
)
may not exceed ±2 percent of the
DD
V
DD
tests may use a V
TT
REF
50
30pF
, and electrical AC and DC
Reference
Point
DD
= V
SS
DD
Q/2, V
.
SS
REF
Q/2 of the transmit-
REF
DD
, f = 100 MHz, T
.
and must track
= +2.5V ±0.2V,
REF
REF
is allowed
(or to the
IL
-to-V
TT
IL
(AC)
is a
A
IH
=
18
12. For slew rates less than 1 V/ns and greater than or
13. The CK/CK# input reference level (for timing ref-
14. Inputs are not recognized as valid until V
15. The output timing reference level, as measured at
16. Transitions occur in the same access time win-
17. The intent of the Don’t Care state after completion
18. This is not a device limit. The device will operate
19. It is recommended that DQS be valid (HIGH or
20. MIN (
21. The refresh period 64ms. This equates to an aver-
25°C, V
0.2V. DM input is grouped with I/O pins, reflecting
the fact that they are matched in loading.
equal to 0.5 V/ns. If slew rate is less than 0.5 V/ns,
timing must be derated:
per each 100mV/ns reduction in slew rate from
500mV/ns, while
exceeds 4.5 V/ns, functionality is uncertain.
erenced to CK/CK#) is the point at which CK and
CK# cross; the input reference level for signals
other than CK/CK# is V
lizes. Exception: during the period before V
stabilizes, CKE 0.3 x V
the timing reference point indicated in Note 3, is
V
dows as data valid transitions. These parameters
are not referenced to a specific voltage level, but
specify when the device output is no longer driv-
ing (
of the postamble is the DQS-driven signal should
either be HIGH, LOW, or high-Z and that any sig-
nal transition within the input switching region
must follow valid input requirements. If DQS tran-
sitions high [above V
not transition to LOW below V
to
with a negative value, but system performance
could be degraded due to bus turnaround.
LOW) on or before the WRITE command. The
case shown (DQS going from high-Z to logic LOW)
applies when no WRITEs were previously in
progress on the bus. If a previous WRITE was in
progress, DQS could be HIGH during this time,
depending on
smallest multiple of
absolute value for the respective parameter.
(MAX) for I
ple of
value for
age refresh rate of 7.8125µs. However, an AUTO
REFRESH command must be asserted at least
once every 70.3µs; burst refreshing or posting by
512MB, 1GB (x64, DR) PC3200
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TT
t
DQSH (MIN).
.
t
RPST,
t
RC or
OUT
t
CK that meets the maximum absolute
t
RAS.
(DC) = V
t
DD
HZ) or begins driving (
200-PIN DDR SODIMM
t
RFC) for I
t
measurements is the largest multi-
DQSS.
t
IH is unaffected. If slew rate
DD
t
CK that meets the minimum
IH
Q/2, V
REF
DD
(DC) (MIN)] then it must
t
DD
IS has an additional 50ps
Q is recognized as LOW.
.
measurements is the
OUT
IH
(peak to peak) =
©2004 Micron Technology, Inc.
(DC) MIN prior
t
LZ).
REF
stabi-
t
RAS
REF