MT16VDDF12864HY-40BD2 Micron Technology Inc, MT16VDDF12864HY-40BD2 Datasheet - Page 27

• Manufacturer Part Number: MT16VDDF12864HY-40BD2
• Description: MODULE SDRAM DDR 1GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDF12864HY-40BD2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 20: Serial Presence-Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
pdf: 09005aef80b57837, source: 09005aef80b577fa
DDAF16C64_128x64HG.fm - Rev. D 9/04 EN
99-127 Manufacturer-Specific Data (RSVD)
48–61
BYTE
65-71
73-90
95-98
41
42
43
44
45
46
47
62
63
64
72
91
92
93
94
Min Active Auto Refresh Time,
Minimum Auto Refresh to Active/Auto Refresh
Command Period,
SDRAM Device Max Cycle Time,
SDRAM Device Max DQS-DQ Skew Time,
SDRAM Device Max Read Data Hold Skew
Factor,
Reserved
DIMM Height
Reserved
SPD Revision
Checksum for Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturer’s JEDEC IDCode
Manufacturing Location
Module Part Number (ASCII)
PCB Identification Code
Identification Code (Continued)
Year of Manufacture in BCD
Week of Manufacturein BCD
Module Serial Number
t
QHS
DESCRIPTION
t
RFC
t
RC
t
CK
MAX
t
DQSQ
27
ENTRY (VERSION)
Variable Data
Variable Data
Variable Data
(Continued)
0.4ns (-40B)
0.5ns (-40B)
55ns (-40B)
70ns (-40B)
12ns (-40B)
Release 1.1
MICRON
01–12
512MB, 1GB (x64, DR) PC3200
-40B
1-9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0
–
200-PIN DDR SODIMM
MT16VDDF6464H MT16VDDF12864H
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01-09
37
46
30
28
50
00
01
00
11
81
2C
00
FF
–
©2004 Micron Technology, Inc.
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01-09
C2
2C
37
46
30
28
50
00
01
00
11
00
FF
–