MT18LSDT6472AG-13ED2 Micron Technology Inc, MT18LSDT6472AG-13ED2 Datasheet - Page 11

• Manufacturer Part Number: MT18LSDT6472AG-13ED2
• Description: MODULE SDRAM 512MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT6472AG-13ED2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.233A
• Number Of Elements: 18
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
M2 applies to both READ and WRITE bursts; when M9
= 1, the programmed burst length applies to READ
bursts, but write accesses are single-location (non-
burst) accesses.
09005aef807b3709
SD9_18C32_64X72AG.fm - Rev. E 11/04 EN
Test modes and reserved states should not be used
When M9 = 0, the burst length programmed via M0-
256MB (x72, ECC, SR), 512MB (x72, ECC, DR)
11
Table 8:
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CAS LATENCY = 2
168-PIN SDRAM UDIMM
CAS Latency Table
CLOCK FREQUENCY (MHz)
ALLOWABLE OPERATING
133
100
100
CAS LATENCY = 3
©2004 Micron Technology, Inc.
N/A
143
133