MT18LSDT6472AG-13ED2 Micron Technology Inc, MT18LSDT6472AG-13ED2 Datasheet - Page 23
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MT18LSDT6472AG-13ED2
Manufacturer Part Number
MT18LSDT6472AG-13ED2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18LSDT6472AG-13ED2.pdf
(26 pages)
Specifications of MT18LSDT6472AG-13ED2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.233A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 22: Serial Presence-Detect Matrix (Continued)
“1”/”0”: Serial data, “driven to HIGH”/”driven to LOW”; V
NOTE:
09005aef807b3709
SD9_18C32_64X72AG.fm - Rev. E 11/04 EN
1. The value of
99-125 Manufacturer-Specific Data (RSVD)
BYTE
36-40
42-61
65-71
73-90
95-98
126
127
31
32
33
34
35
41
62
63
64
72
91
92
93
94
DESCRIPTION
Module Rank Density
Command and Address Setup Time,
Command and Address Hold Time,
Data Signal Input Setup Time,
Data Signal Input Hold Time,
Reserved
Device Minimum Active/Auto-Refresh Time,
Reserved
SPD Revision
Checksum For Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturer’s JEDEC ID Code(Cont.)
Manufacturing Location
Module Part Number (ASCII)
Pcb Identification Code
Identification Code (Cont.)
Year of Manufacture in BCD
Week of Manufacture in BCD
Module Serial Number
System Frequency
SDRAM Component & Clock Detail
t
RAS used for -13E modules is calculated from
t
DH
t
DS
256MB (x72, ECC, SR), 512MB (x72, ECC, DR)
t
AH,
t
AS,
t
t
CMH
CMS
t
RC
DD
23
= +3.3V ±0.3V
1.5ns (-13E/-133)
0.8ns (-13E/-133)
1.5ns (-13E/-133)
t
0.8ns (-13E/-133
(-13E/-133/-10E)
RC -
(VERSION)
60ns (-13E)
66ns (-133)
1ns (-10E))
70ns (10E)
2ns (-10E)
1ns (-10E)
2ns (-10E)
100 MHz
MICRON
Rev. 2.0
ENTRY
256MB
t
(-13E)
(-133)
(-10E)
1–12
RP. Actual device specification value is 37ns.
1–9
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
168-PIN SDRAM UDIMM
MT9LSDT3272A
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01–09
3C
C9
2C
AF
40
15
20
08
10
15
20
08
10
00
42
46
00
02
15
61
00
64
FF
MT18LSDT6472A
Variable Data
Variable Data
Variable Data
Variable Data
©2004 Micron Technology, Inc.
01–0C
01–09
CA
40
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
16
62
2C
00
64
FF
FF