MT18VDDT6472AG-335G4 Micron Technology Inc, MT18VDDT6472AG-335G4 Datasheet - Page 21

• Manufacturer Part Number: MT18VDDT6472AG-335G4
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDT6472AG-335G4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.611A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29; notes appear on pages 22–25; 0°C
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
AC CHARACTERISTICS
PARAMETER
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
256MB
512MB, 1GB,
2GB
256MB
512MB, 1GB,
2GB
256MB,
512MB
1GB
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
T
A
21
SYMBOL
+70°C; V
t
t
t
t
t
t
XSNR
XSRD
t
REFC
WTR
REFI
VTD
NA
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
DD
127.5
MIN
200
= V
15
75
t
1
0
QH -
-26A/-265
DD
Q = +2.5V ±0.2V
t
DQSQ
MAX
140.6
70.3
15.6
7.8
127.5
MIN
t
200
15
QH -
75
1
0
©2004 Micron Technology, Inc. All rights reserved.
-202
t
DQSQ
MAX
140.6
70.3
15.6
7.8
UNITS
t
t
ns
CK
ns
µs
µs
µs
µs
ns
ns
ns
CK
NOTES
22
21
21
21
21