MT36HTF25672FY-53EB3E3 Micron Technology Inc, MT36HTF25672FY-53EB3E3 Datasheet - Page 8

• Manufacturer Part Number: MT36HTF25672FY-53EB3E3
• Description: MODULE DDR2 2GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36HTF25672FY-53EB3E3

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 512Mb
• Package Type: FBDIMM
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 95C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 7:
Table 8:
Table 9:
PDF: 09005aef829a1e4d/Source: 09005aef8297c0ad
HTF36C256_512x72F_RC_H.fm - Rev. B 9/09 EN
Parameter
Parameter
Voltage on any pin relative to V
Voltage on V
Voltage on V
Voltage on V
DDR2 SDRAM device operating case temperature
AMB supply voltage
DDR2 SDRAM supply voltage
Termination voltage
EEPROM supply voltage
SPD input high (logic 1) voltage
SPD input low (logic 0) voltage
RESET input high (logic 1) voltage
RESET input low (logic 0) voltage
Leakage current (RESET)
Leakage current (link)
FBDIMM Data
3.2 Gb/s
4.0 Gb/s
4.8 Gb/s
Rate
AMB device operating temperature
CC
DD
TT
Absolute Maximum Ratings
Input DC Voltage and Operating Conditions
AMB Clock Ratios
pin relative to V
pin relative to V
pin relative to V
Notes:
Notes:
DDR Data Link
533 Mb/s
666 Mb/s
800 Mb/s
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only and functional operation of the module at these or
any other conditions outside those indicated in the device data sheet are not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. V
2. T
3. See applicable DDR2 SDRAM component data sheet for
1. Applies to AMB and SPD.
2. Applies to serial memory buffer (SMB) and SPD bus signals.
3. Applies to AMB CMOS signal RESET#.
4. For all other AMB-related DC parameters, please refer to the high-speed differential link
t
settings. The
sustain <85°C operation.
interface specification.
SS
REFI = 3.9µs above 85°C); refer to the DDR2 SDRAM component data sheet.
SS
SS
SS
C
IN
is specified at 95°C only when using 2X refresh timing (
should not be greater than V
Core Frequency
t
REFI parameter is used to specify the doubled refresh interval necessary to
266 MHz
333 MHz
400 MHz
Symbol
Symbol
2GB, 4GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
V
V
V
V
V
V
DDSPD
V
IN
IH(DC)
IH(DC)
V
V
IL(DC)
IL(DC)
l
l
DD
V
V
V
CC
TT
,
L
L
T
DD
CC
V
TT
C
OUT
8
Reference Clock
CC
0.48 × V
.
133 MHz
167 MHz
200 MHz
Min
1.46
–90
1.7
2.1
–5
3
1
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–0.3
–0.3
–0.5
–0.5
0
0
DD
0.5 × V
Nom
1.5
1.8
3.3
–
–
–
–
–
–
+1.75
+1.75
FBDIMM Link:
Max
+110
+2.3
+2.3
+95
DD
t
REFI and extended mode register
t
Electrical Specifications
Core
REFI = 7.8µs at or below 85°C;
12:1
12:1
12:1
0.52 × V
V
Max
1.54
DDSPD
+90
1.9
3.6
0.8
0.5
©2007 Micron Technology, Inc. All rights reserved.
+5
–
Units
DD
°C
°C
V
V
V
V
Units
µA
µA
V
V
V
V
V
V
V
V
Core: DDR
1:2
1:2
1:2
Notes
2, 3
Notes
1
1
2
2
3
2
3
4