MT4HTF3264HY-667D3 Micron Technology Inc, MT4HTF3264HY-667D3 Datasheet - Page 15

• Manufacturer Part Number: MT4HTF3264HY-667D3
• Description: MODULE DDR2 256MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4HTF3264HY-667D3

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 32Mx64
• Total Density: 256MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1A
• Number Of Elements: 4
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 557-1304; MT4HTF3264HY-667D3

Table 13: DDR2 I
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16) com-
ponent data sheet
PDF: 09005aef8161d160
htf4c16_32_64x64h.pdf - Rev. I 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 512MB (Die Revision E) (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
DD
128MB, 256MB, 512MB (x64, SR) 200-Pin DDR2 SODIMM
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
15
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/-
1760
800
1400
-667
© 2005 Micron Technology, Inc. All rights reserved.
I
DD
1320
-53E
Specifications
-40E
1320
Units
mA