MT4HTF3264HY-667D3 Micron Technology Inc, MT4HTF3264HY-667D3 Datasheet - Page 2

• Manufacturer Part Number: MT4HTF3264HY-667D3
• Description: MODULE DDR2 256MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4HTF3264HY-667D3

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 32Mx64
• Total Density: 256MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1A
• Number Of Elements: 4
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 557-1304; MT4HTF3264HY-667D3

Table 2: Addressing
Table 3: Part Numbers and Timing Parameters – 128MB Modules (End of Life)
Base device: MT47H16M16,
Table 4: Part Numbers and Timing Parameters – 256MB Modules
Base device: MT47H32M16,
Table 5: Part Numbers and Timing Parameters – 512MB Modules
Base device: MT47H64M16,
PDF: 09005aef8161d160
htf4c16_32_64x64h.pdf - Rev. I 3/10 EN
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
Notes:
MT4HTF1664H9(I)Y-53E__
MT4HTF1664H(I)Y-667__
MT4HTF1664H(I)Y-40E__
MT4HTF3264H(I)Y-80E__
MT4HTF3264H(I)Y-800__
MT4HTF3264H(I)Y-667__
MT4HTF3264H(I)Y-53E__
MT4HTF3264H(I)Y-40E__
MT4HTF6464H(I)Y-80E__
MT4HTF6464H(I)Y-800__
MT4HTF6464H(I)Y-667__
MT4HTF6464H(I)Y-53E__
MT4HTF6464H(I)Y-40E__
Part Number
Part Number
Part Number
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT4HTF6464HY-667D3.
2
2
2
1
1
1
256Gb DDR2 SDRAM
512Mb DDR2 SDRAM
1Gb DDR2 SDRAM
Module
Density
Module
Density
Module
Density
128MB
128MB
128MB
256MB
256MB
256MB
256MB
256MB
512MB
512MB
512MB
512MB
512MB
128MB, 256MB, 512MB (x64, SR) 200-Pin DDR2 SODIMM
256Mb (16 Meg x 16)
Configuration
Configuration
Configuration
8K A[12:0]
512 A[8:0]
4 BA[1:0]
16 Meg x 64
16 Meg x 64
16 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
128MB
1 S0#
8K
2
Bandwidth
Bandwidth
Bandwidth
Module
Module
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
512Mb (32 Meg x 16)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
8K A[12:0]
1K A[9:0]
4 BA[1:0]
256MB
1 S0#
8K
Memory Clock/
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
Data Rate
© 2005 Micron Technology, Inc. All rights reserved.
1Gb (64 Meg x 16)
8K A[12:0]
1K A[9:0]
8 BA[2:0]
512MB
(CL-
(CL-
(CL-
1 S0#
Clock Cycles
Clock Cycles
Clock Cycles
8K
t
t
t
Features
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
RCD-
RCD-
RCD-
t
t
t
RP)
RP)
RP)