HYS64T64000HU-3S-B Qimonda, HYS64T64000HU-3S-B Datasheet - Page 16
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HYS64T64000HU-3S-B
Manufacturer Part Number
HYS64T64000HU-3S-B
Description
MODULE DDR2 512MB 240-DIMM
Manufacturer
Qimonda
Datasheet
1.HYS64T64000HU-3S-B.pdf
(87 pages)
Specifications of HYS64T64000HU-3S-B
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
333MHz
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1023
3
This chapter describes the Electrical Characteristics.
3.1
Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in
1) When
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
3) Above 85 °C the Auto-Refresh command interval has to be reduced to
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
Rev. 1.3, 2006-12
03292006-6GMD-RSFT
Symbol
V
V
V
V
T
Symbol
T
STG
DD
DDQ
DDL
IN
OPER
temperature must be maintained between 0 - 95 °C under all other specification parameters.
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of
,
V
OUT
V
DD
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
and
V
Parameter
Voltage on
Voltage on
Voltage on
Voltage on any pin relative to
Storage Temperature
DDQ
Parameter
Operating Temperature
Electrical Characteristics
Absolute Maximum Ratings
and
V
DDL
V
V
V
are less than 500 mV;
DD
DDQ
DDL
pin relative to
pin relative to
pin relative to
V
V
V
V
SS
SS
SS
SS
V
REF
may be equal to or less than 300 mV.
16
HYS[64/72]T[32/64/128]xx0HU-[25F/2.5/3/3S/3.7/5]-B
DRAM Component Operating Temperature Range
t
REFI
= 3.9 µs
Min.
0
Rating
Rating
Min.
–1.0
–0.5
–0.5
–0.5
–55
Max.
95
Unbuffered DDR2 SDRAM Module
Table 8
Max.
+2.3
+2.3
+2.3
+2.3
+100
Absolute Maximum Ratings
I
at any time.
DD6
Unit
°C
by approximately 50%
Unit
V
V
V
V
°C
Internet Data Sheet
TABLE 8
TABLE 9
Note
1)2)3)4)
Note
1)
1)2)
1)2)
1)
1)2)