HYS64T64000HU-3S-B Qimonda, HYS64T64000HU-3S-B Datasheet - Page 17
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HYS64T64000HU-3S-B
Manufacturer Part Number
HYS64T64000HU-3S-B
Description
MODULE DDR2 512MB 240-DIMM
Manufacturer
Qimonda
Datasheet
1.HYS64T64000HU-3S-B.pdf
(87 pages)
Specifications of HYS64T64000HU-3S-B
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
333MHz
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1023
3.2
This chapter contains the DC Operating Conditions tables.
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
4) When operating this product in the 85 °C to 95 °C
5) Up to 3000 m.
1) Under all conditions,
2) Peak to peak AC noise on
3) Input voltage for any connector pin under test of 0 V ≤
Rev. 1.3, 2006-12
03292006-6GMD-RSFT
Parameter
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
In / Output Leakage Current
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of
DC Operating Conditions
V
DDQ
must be less than or equal to
V
REF
may not exceed ± 2%
Symbol
V
V
V
V
V
V
I
L
DD
DDQ
REF
DDSPD
IH(DC)
IL (DC
)
T
CASE
Values
Min.
1.7
1.7
0.49 ×
1.7
V
– 0.30
– 5
V
V
REF
REF
IN
temperature range, the High Temperature Self Refresh has to be enabled by
V
Symbol
T
T
T
PBar
H
DD
OPR
CASE
STG
≤
OPR
+ 0.125
(DC).
V
V
DDQ
DDQ
17
V
Supply Voltage Levels and DC Operating Conditions
+ 0.3 V; all other pins at 0 V. Current is per pin
REF
HYS[64/72]T[32/64/128]xx0HU-[25F/2.5/3/3S/3.7/5]-B
is also expected to track noise in
Typ.
1.8
1.8
0.5 ×
—
—
—
—
Values
Min.
0
0
– 50
+69
10
V
DDQ
Max.
+65
+95
+100
+105
90
Unbuffered DDR2 SDRAM Module
Max.
1.9
1.9
0.51 ×
3.6
V
V
5
DDQ
REF
t
REFI
– 0.125
+ 0.3
V
= 3.9 µs
DDQ
V
I
DDQ
DD6
Operating Conditions
Unit
°C
°C
°C
kPa
%
.
by approximately 50%.
Internet Data Sheet
Unit
V
V
V
V
V
V
µA
TABLE 10
TABLE 11
Note
1)2)3)4)
5)
Note
1)
2)
3)