STEVAL-ISA031V1 STMicroelectronics, STEVAL-ISA031V1 Datasheet

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... Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest R ...

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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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STFW4N150, STP4N150, STW4N150 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS Drain current (continuous °C C Drain current (continuous ...

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Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS Breakdown voltage Zero gate voltage I DSS Drain current (V Gate-body leakage I GSS current (V V Gate threshold ...

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STFW4N150, STP4N150, STW4N150 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM ...

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Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 4. Safe operating area for TO-3PF Tj=150°C 0.1 Tc=25°C Sinlge pulse 0.01 0 100 Figure 6. Safe operating area ...

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STFW4N150, STP4N150, STW4N150 Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Doc ID 11262 Rev 9 Electrical characteristics 7/15 ...

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Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Figure 18. Maximum avalanche energy vs temperature 8/15 STFW4N150, STP4N150, STW4N150 Figure 15. Normalized on resistance vs temperature Figure 17. Normalized B Doc ID ...

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STFW4N150, STP4N150, STW4N150 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times A A ...

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Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

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STFW4N150, STP4N150, STW4N150 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 ...

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Package mechanical data Dim øP øR S 12/15 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 ...

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STFW4N150, STP4N150, STW4N150 DIM Dia TO-3PF mechanical data mm. min. typ 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 5.45 15.30 ...

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Revision history 5 Revision history Table 8. Document revision history Date 29-Mar-2005 07-Jul-2005 07-Oct-2005 10-Aug-2006 06-Nov-2007 09-Apr-2008 21-Jan-2009 23-Feb-2009 23-Jul-2009 14/15 Revision 1 Initial release 2 Removed TO-220FP 3 Document status promoted from preliminary data to datasheet 4 Document reformatted, ...

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... STFW4N150, STP4N150, STW4N150 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...