STEVAL-ISA034V1 STMicroelectronics, STEVAL-ISA034V1 Datasheet - Page 4

• Manufacturer Part Number: STEVAL-ISA034V1
• Description: BOARD EVAL L6565/STW3N150
• Manufacturer: STMicroelectronics
• Type: MOSFET & Power Driverr

Specifications of STEVAL-ISA034V1

• Design Resources: STEVAL-ISA034V1 Gerber Files STEVAL-ISA034V1 Schematic STEVAL-ISA034V1 Bill of Materials
• Main Purpose: AC/DC, Primary Side
• Outputs And Type: 2, Isolated
• Power - Output: 10W
• Voltage - Output: 12V, 5V
• Current - Output: 600mA, 550mA
• Voltage - Input: 185 ~ 460VAC
• Regulator Topology: Flyback
• Board Type: Fully Populated
• Utilized Ic / Part: L6565, STW3N150
• Input Voltage: 185 V to 460 V
• Output Voltage: 5 V, 12 V
• Product: Power Management Modules
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Switching: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: L6565, STW3N150
• Other names: 497-8227; STEVAL-ISA034V1

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
case
oss eq.
V
R
(BR)DSS
g
increases from 0 to 80% V
C
I
I
C
C
Q
GS(th)
Q
DS(on
GSS
DSS
fs
Q
R
oss eq.
oss
iss
rss
gs
gd
g
g
(1)
= 25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
Doc ID 13102 Rev 9
V
V
V
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see Figure 19)
I
V
V
V
V
D
DS
DS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
=0 to 1200 V, V
= Max rating
= Max rating, T
= 30 V, I
= 25 V, f = 1 MHz, V
= 10 V
= ± 30 V
= V
= 10 V, I
= 1200 V, I
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 250 µA
= 1.3 A
= 1.3 A
D
= 0
= 2.5 A,
GS
C
=125 °C
STFW3N150, STP3N150, STW3N150
= 0
GS
= 0
1500
Min.
Min.
3
-
-
-
-
-
Typ.
Typ.
13.2
29.3
939
102
100
2.6
4.6
17
4
6
4
oss
± 100
when V
Max.
Max.
500
10
5
9
-
-
-
-
-
DS
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
Ω
Ω
V
V
S