C8051F410-TB Silicon Laboratories Inc, C8051F410-TB Datasheet - Page 143

• Manufacturer Part Number: C8051F410-TB
• Description: BOARD PROTOTYPING W/C8051F410
• Manufacturer: Silicon Laboratories Inc
• Type: MCUr

Specifications of C8051F410-TB

• Contents: Board
• Processor To Be Evaluated: C8051F41x
• Interface Type: USB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With/related Products: C8051F410
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 16.2. Flash Electrical Characteristics
V
Flash Size
Endurance
Erase Cycle Time
Write Cycle Time
Read Cycle Time
V
*Note: 512 bytes at addresses 0x7E00 to 0x7FFF are reserved.
DD
DD
Bits7–4: UNUSED. Read = 0000b. Write = don’t care.
Bits3–0: PERIOD: Oneshot Period Control Bits.
= 2.0 to 2.75 V; –40 to +85 ºC unless otherwise specified. Typical values are given at 25 ºC.
Bit7
Parameter
R
-
These bits limit the internal Flash read strobe width as follows. When the Flash read strobe
is de-asserted, the Flash memory enters a low-power state for the remainder of the system
clock cycle. These bits have no effect when the system clocks is greater than 12.5 MHz and
FLRT = 0.
FLASH
Bit6
SFR Definition 16.4. ONESHOT: Flash Oneshot Period
R
-
RDMAX
C8051F410/1
C8051F412/3
V
FLSCL.3–0 written to '0000'
FLSCL.3–0 written to '0000'
Write/Erase Operations
DD
Bit5
is 2.2 V or greater
R
-
=
5ns
Conditions
+
Bit4
R

-
PERIOD 5ns
Rev. 1.1
R/W
Bit3


32768*
16384
2.25
20 k
Min
R/W
Bit2
16
38
40
PERIOD
C8051F410/1/2/3
90 k
Typ
20
46
—
—
—
R/W
Bit1
SFR Address:
Max
57
—
—
24
—
—
R/W
Bit0
Erase/Write
0xAF
Reset Value
00001111
Units
bytes
ms
µs
ns
V
143