IRF6636 International Rectifier, IRF6636 Datasheet

IRF6636

Manufacturer Part Number

IRF6636

Description

MOSFET N-CH 20V 18A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6636TR1.pdf (10 pages)

Specifications of IRF6636

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.5 mOhm @ 18A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

2.45V @ 250µA

Gate Charge (qg) @ Vgs

27nC @ 4.5V

Input Capacitance (ciss) @ Vds

2420pF @ 10V

Power - Max

2.2W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric ST

Configuration

Single Quad Drain Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4.5 mOhms

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

18 A

Power Dissipation

2.2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Fall Time

6.2 ns

Minimum Operating Temperature

- 40 C

Rise Time

19 ns

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

IRF6636TR

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Description

The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6636 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Notes:

www.irf.com

Absolute Maximum Ratings

RoHS compliant containing no lead or bromide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for for Control FET socket of Sync. Buck Converter

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

@ T

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET MOSFETs

Repetitive rating; pulse width limited by max. junction temperature.

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 25°C

T J = 125°C

Ãe

I D = 18A

Parameter

@ 10V

„

†

‰

20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V

18nC

Starting T

Surface mounted on 1 in. square Cu board, steady state.

g tot

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

DSS

measured with thermocouple mounted to top (Drain) of part.

6.0

5.0

4.0

3.0

2.0

1.0

0.0

6.1nC

= 25°C, L = 0.27mH, R

I D = 14A

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

1.9nC

V DS = 16V

V DS = 10V

gs2

Max.

140

±20

DS(on)

7.3nC

= 25Ω, I

IRF6636

packaging to achieve the

DirectFET™ ISOMETRIC

10nC

= 14A.

oss

DS(on)

Units

1.8V

11/17/05

gs(th)

Related parts for IRF6636

IRF6636 Summary of contents

Page 1

... The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. ...

Page 2

... IRF6636 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... Ci i/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) ‰ T measured with thermocouple incontact with top (Drain) of part. C Š measured at θ ‡ IRF6636 Max. 2.2 1.4 42 270 - 150 Typ. Max. ––– 58 12.5 ––– 20 ––– ––– ...

Page 4

... IRF6636 1000 100 10 ≤ 60µs PULSE WIDTH 2. 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 10V ≤ 60µs PULSE WIDTH 100 150° 25° -40° Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 ...

Page 5

... 25°C 0 150°C Single Pulse 0.01 0.10 1.00 10. Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1 50µA 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 - 100 125 150 Temperature ( °C ) TOP 6.4A 9.8A 125 150 IRF6636 100.00 5 ...

Page 6

... IRF6636 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit Pulse Width < 1µs Duty Factor < 0.1% Fig 17a. Switching Time Test Circuit ...

Page 7

... D.U.T. I Reverse Recovery „ Current - + D.U. Re-Applied G + Voltage - Inductor Curent V ® HEXFET Power MOSFETs P.W. Period D = Period Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ for Logic Level Devices for N-Channel IRF6636 V =10V ...

Page 8

... IRF6636 DirectFET™ Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL MAX CODE ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6636). For 1000 parts on 7" reel, order IRF6636TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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