PESD5V0U4BW,115 NXP Semiconductors, PESD5V0U4BW,115 Datasheet - Page 3

• Manufacturer Part Number: PESD5V0U4BW,115
• Description: DIODE ARRAY ESD BI-DIR SOT-665
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD5V0U4BW,115

• Package / Case: SOT-665
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Channels: 4 Channels
• Operating Voltage: 5 V
• Breakdown Voltage: 6.5 V
• Capacitance: 2.9 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Mounting Style: SMD/SMT
• Power (watts): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061953115

NXP Semiconductors
4. Marking
5. Limiting values
PESD5V0U4BF_PESD5V0U4BW_1
Product data sheet
Table 5.
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 7.
T
[1]
[2]
[3]
Type number
PESD5V0U4BF
PESD5V0U4BW
Symbol
Per device
T
T
T
Symbol
Per diode
V
amb
j
amb
stg
ESD
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
Measured from pin 1, 3, 4 or 5 to pin 2.
= 25 C unless otherwise specified.
Parameter
electrostatic discharge voltage
Marking codes
Limiting values
ESD maximum ratings
PESD5V0U4BF
PESD5V0U4BW
PESD5V0U4BF
PESD5V0U4BW
Parameter
junction temperature
ambient temperature
storage temperature
Ultra low capacitance bidirectional quadruple ESD protection arrays
PESD5V0U4BF; PESD5V0U4BW
Rev. 01 — 15 August 2008
Conditions
Conditions
IEC 61000-4-2
(contact discharge)
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
MIL-STD-883 (human
body model)
Marking code
B1
A6
Min
-
55
65
[1]
[2]
[3]
[2]
[3]
Min
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
150
+150
+150
Max
10
10
8
8
Unit
C
C
C
Unit
kV
kV
kV
kV
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