PESD5V0U4BW,115 NXP Semiconductors, PESD5V0U4BW,115 Datasheet - Page 4

• Manufacturer Part Number: PESD5V0U4BW,115
• Description: DIODE ARRAY ESD BI-DIR SOT-665
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD5V0U4BW,115

• Package / Case: SOT-665
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Channels: 4 Channels
• Operating Voltage: 5 V
• Breakdown Voltage: 6.5 V
• Capacitance: 2.9 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Mounting Style: SMD/SMT
• Power (watts): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061953115

NXP Semiconductors
PESD5V0U4BF_PESD5V0U4BW_1
Product data sheet
Table 8.
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
ESD standards compliance
Ultra low capacitance bidirectional quadruple ESD protection arrays
PESD5V0U4BF; PESD5V0U4BW
Rev. 01 — 15 August 2008
100 %
10 %
90 %
I
PP
t
r
30 ns
0.7 ns to 1 ns
60 ns
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
001aaa631
t
© NXP B.V. 2008. All rights reserved.
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