PIC18F25J11-I/ML Microchip Technology, PIC18F25J11-I/ML Datasheet - Page 103

• Manufacturer Part Number: PIC18F25J11-I/ML
• Description: IC PIC MCU FLASH 32K 2V 28-QFN
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F25J11-I/ML

• Core Size: 8-Bit
• Program Memory Size: 32KB (16K x 16)
• Core Processor: PIC
• Speed: 48MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Type: FLASH
• Ram Size: 3.8K x 8
• Voltage - Supply (vcc/vdd): 2.15 V ~ 3.6 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Controller Family/series: PIC18
• No. Of I/o's: 16
• Ram Memory Size: 3.6875KB
• Cpu Speed: 48MHz
• No. Of Timers: 5
• Interface: EUSART, I2C, SPI
• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 3776 B
• Interface Type: EUSART, I2C, SPI
• Maximum Clock Frequency: 48 MHz
• Number Of Timers: 5
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, DM183022, DM183032, DV164136, MA180023
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 10 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: AC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

6.5
The programming block is 32 words or 64 bytes.
Programming one word or 2 bytes at a time is also
supported.
Table writes are used internally to load the holding
registers needed to program the Flash memory. There
are 64 holding registers used by the table writes for
programming.
Since the Table Latch (TABLAT) is only a single byte, the
TBLWT instruction may need to be executed 64 times for
each programming operation (if WPROG = 0). All of the
table write operations will essentially be short writes
because only the holding registers are written. At the
end of updating the 64 holding registers, the EECON1
register must be written to in order to start the
programming operation with a long write.
The long write is necessary for programming the
internal Flash. Instruction execution is halted while in a
long write cycle. The long write will be terminated by
the internal programming timer.
FIGURE 6-5:
6.5.1
The sequence of events for programming an internal
program memory location should be:
1.
2.
3.
4.
5.
6.
7.
© 2009 Microchip Technology Inc.
TBLPTR = xxxxx0
Read 1024 bytes into RAM.
Update data values in RAM as necessary.
Load Table Pointer register with address being
erased.
Execute the erase procedure.
Load Table Pointer register with address of first
byte being written, minus 1.
Write the 64 bytes into the holding registers with
auto-increment.
Set the WREN bit (EECON1<2>) to enable byte
writes.
Writing to Flash Program Memory
FLASH PROGRAM MEMORY WRITE
SEQUENCE
Holding Register
TABLE WRITES TO FLASH PROGRAM MEMORY
8
TBLPTR = xxxxx1
Holding Register
8
Program Memory
TBLPTR = xxxxx2
Write Register
TABLAT
PIC18F46J11 FAMILY
The on-chip timer controls the write time. The
write/erase voltages are generated by an on-chip
charge pump, rated to operate over the voltage range
of the device.
8.
9.
10. Write 0AAh to EECON2.
11. Set the WR bit. This will begin the write cycle.
12. The CPU will stall for the duration of the write for
13. Re-enable interrupts.
14. Repeat steps 6 through 13 until all 1024 bytes
15. Verify the memory (table read).
An example of the required code is provided in
Example 6-3 on the following page.
Note:
Holding Register
Note 1: Unlike previous PIC
Disable interrupts.
Write 55h to EECON2.
T
are written to program memory.
IW
(see parameter D133A).
2: To maintain the endurance of the program
8
Before setting the WR bit, the Table
Pointer address needs to be within the
intended address range of the 64 bytes in
the holding register.
the PIC18F46J11 family do not reset the
holding registers after a write occurs. The
holding registers must be cleared or
overwritten
sequence.
memory cells, each Flash byte should not
be programmed more than once between
erase operations. Before attempting to
modify the contents of the target cell a
second time, an erase of the target page,
or a bulk erase of the entire memory, must
be performed.
TBLPTR = xxxx3F
before
®
devices, devices of
DS39932C-page 103
a
Holding Register
programming
8