AT90PWM3-16SQ Atmel, AT90PWM3-16SQ Datasheet - Page 20

• Manufacturer Part Number: AT90PWM3-16SQ
• Description: IC AVR MCU FLASH 8K 32SOIC
• Manufacturer: Atmel
• Series: AVR® 90PWM Lightingr

Specifications of AT90PWM3-16SQ

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 27
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 11x10b; D/A 1x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 32-SOIC (7.5mm Width)
• Processor Series: AT90PWMx
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI, USART
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 27
• Number Of Timers: 2
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRFBKIT, ATAVRISP2
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 11 Channel
• On-chip Dac: 10 bit, 1 Channel
• For Use With: ATSTK600-SOIC - STK600 SOCKET/ADAPTER FOR SOICATAVRMC200 - KIT EVAL FOR AT90PWM3 ASYNCATAVRFBKIT - KIT DEMO BALLAST FOR AT90PWM2ATSTK520 - ADAPTER KIT FOR 90PWM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.3
6.3.1
6.3.2
20
EEPROM Data Memory
AT90PWM2/3/2B/3B
EEPROM Read/Write Access
The EEPROM Address Registers – EEARH and EEARL
Figure 3. On-chip Data SRAM Access Cycles
The AT90PWM2/2B/3/3B contains 512 bytes of data EEPROM memory. It is organized as a
separate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
For a detailed description of SPI and Parallel data downloading to the EEPROM, see
Downloading” on page
mands” on page 282
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
For details on how to avoid problems in these situations
tion” on page 25.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
Bit
CC
is likely to rise or fall slowly on power-up/down. This causes the device for some
15
–
Address
clk
Data
Data
WR
CPU
RD
respectively.
14
293, and
–
Compute Address
13
–
“Parallel Programming Parameters, Pin Mapping, and Com-
T1
Memory Access Instruction
12
–
11
–
Table
Address valid
T2
10
seeSee “Preventing EEPROM Corrup-
–
6-2. A self-timing function, however,
9
–
Next Instruction
EEAR8
8
T3
EEARH
4317J–AVR–08/10
“Serial