AT90PWM3-16SQ Atmel, AT90PWM3-16SQ Datasheet - Page 288

IC AVR MCU FLASH 8K 32SOIC

AT90PWM3-16SQ

Manufacturer Part Number
AT90PWM3-16SQ
Description
IC AVR MCU FLASH 8K 32SOIC
Manufacturer
Atmel
Series
AVR® 90PWM Lightingr
Datasheet

Specifications of AT90PWM3-16SQ

Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
27
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 11x10b; D/A 1x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
32-SOIC (7.5mm Width)
Processor Series
AT90PWMx
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SPI, USART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
27
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRFBKIT, ATAVRISP2
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 11 Channel
On-chip Dac
10 bit, 1 Channel
For Use With
ATSTK600-SOIC - STK600 SOCKET/ADAPTER FOR SOICATAVRMC200 - KIT EVAL FOR AT90PWM3 ASYNCATAVRFBKIT - KIT DEMO BALLAST FOR AT90PWM2ATSTK520 - ADAPTER KIT FOR 90PWM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
25.8.5
25.8.6
288
AT90PWM2/3/2B/3B
Programming the EEPROM
Reading the Flash
The EEPROM is organized in pages, see
EEPROM, the program data is latched into a page buffer. This allows one page of data to be
programmed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to
Data loading):
1. A: Load Command “0001 0001”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. C: Load Data (0x00 - 0xFF).
5. E: Latch data (give PAGEL a positive pulse).
K: Repeat 3 through 5 until the entire buffer is filled.
L: Program EEPROM page
1. Set BS1 to “0”.
2. Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY
3. Wait until to RDY/BSY goes high before programming the next page (See
Figure 25-4. Programming the EEPROM Waveforms
The algorithm for reading the Flash memory is as follows (refer to
page 286
1. A: Load Command “0000 0010”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. Set OE to “0”, and BS1 to “0”. The Flash word low byte can now be read at DATA.
5. Set BS1 to “1”. The Flash word high byte can now be read at DATA.
6. Set OE to “1”.
goes low.
signal waveforms).
RESET +12V
RDY/BSY
PAGEL
XTAL1
DATA
XA1
XA0
BS1
BS2
WR
OE
for details on Command and Address loading):
“Programming the Flash” on page 286
0x11
A
ADDR. HIGH
G
ADDR. LOW
B
DATA
C
Table 25-12 on page
XX
E
ADDR. LOW
B
for details on Command, Address and
DATA
C
K
XX
E
284. When programming the
“Programming the Flash” on
L
Figure 25-4
4317J–AVR–08/10
for

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