STR710RZH6 STMicroelectronics, STR710RZH6 Datasheet - Page 46

• Manufacturer Part Number: STR710RZH6
• Description: MCU ARM7 32BIT 64-LFBGA
• Manufacturer: STMicroelectronics
• Series: STR7r

Specifications of STR710RZH6

• Core Processor: ARM7
• Core Size: 32-Bit
• Speed: 66MHz
• Connectivity: CAN, EBI/EMI, HDLC, I²C, SmartCard, SPI, UART/USART, USB
• Peripherals: PWM, WDT
• Number Of I /o: 48
• Program Memory Type: ROMless
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 4x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LFBGA
• Processor Series: STR710x
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 64 KB
• Interface Type: CAN, EMI, USB
• Maximum Clock Frequency: 66 MHz
• Number Of Programmable I/os: 48
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MCBSTR7, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 4 Channel
• For Use With: MCBSTR7UME - MCBSTR7 + ULINK-ME DEV KITMCBSTR7 - BOARD EVAL STM STR71X SERIES497-4516 - BOARD EVAL FOR STR71X SER MCU
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / Rohs Status: Details

Electrical parameters
4.3.3
46/78
Memory characteristics
Flash memory
V
Table 24.
Notes:
1. T
2. Guaranteed by design, not tested in production
N
N
Symbol
33
t
t
t
END_B0
END_B1
t
RPD
PSL
ESL
t
t
t
t
t
PDW
t
t
t
t
ESR
PB0
PB1
RET
PW
= 3.0 to 3.6V, T
ES
ES
ES
ES
A
=45°C after 0 cycles. Guaranteed by characterization, not tested in production.
2)
2)
2)
Word Program
Double Word Program
Bank 0 Program (256K)
Bank 1 Program (16K)
Sector Erase (64K)
Sector Erase (8K)
Bank 0 Erase (256K)
Bank 1 Erase (16K)
Recovery when disabled
Program Suspend Latency
Erase Suspend Latency
Endurance (Bank 0
sectors)
Endurance (Bank 1
sectors)
Data Retention (Bank 0
and Bank 1)
Erase Suspend Rate
Flash memory characteristics
Parameter
A
= -40 to 85 °C unless otherwise specified.
Double Word Program
Double Word Program
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
T
Min time from Erase
Resume to next Erase
Suspend
A
=85°
Test conditions
Min.
100
10
20
20
Value
Typ
130
1.6
1.9
0.7
0.6
8.0
6.6
0.9
0.8
2.3
40
60
Max
13.7
11.2
170
300
2.1
4.0
3.3
1.1
1.0
1.5
1.3
20
10
1)
STR71xF
kcycles
kcycles
Years
ms
Unit
ms
µs
µs
µs
µs
µs
s
s
s
s
s