STR710RZH6 STMicroelectronics, STR710RZH6 Datasheet - Page 48

MCU ARM7 32BIT 64-LFBGA

STR710RZH6

Manufacturer Part Number
STR710RZH6
Description
MCU ARM7 32BIT 64-LFBGA
Manufacturer
STMicroelectronics
Series
STR7r
Datasheet

Specifications of STR710RZH6

Core Processor
ARM7
Core Size
32-Bit
Speed
66MHz
Connectivity
CAN, EBI/EMI, HDLC, I²C, SmartCard, SPI, UART/USART, USB
Peripherals
PWM, WDT
Number Of I /o
48
Program Memory Type
ROMless
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 4x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LFBGA
Processor Series
STR710x
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
64 KB
Interface Type
CAN, EMI, USB
Maximum Clock Frequency
66 MHz
Number Of Programmable I/os
48
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MCBSTR7, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 4 Channel
For Use With
MCBSTR7UME - MCBSTR7 + ULINK-ME DEV KITMCBSTR7 - BOARD EVAL STM STR71X SERIES497-4516 - BOARD EVAL FOR STR71X SER MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STR710RZH6
Manufacturer:
STMicroelectronics
Quantity:
900
Part Number:
STR710RZH6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical parameters
48/78
Table 25.
Electro magnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 26.
Notes:
1. Not tested in production.
2. BGA and LQFP devices have similar EMI characteristics.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electro-static discharge (ESD)
Electro-Static Discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body Model and Machine Model. This test conforms to the
JESD22-A114A/A115A standard.
Symbol
Symbol
V
V
FESD
EFTB
S
EMI
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100pF on V
pins to induce a functional disturbance
Peak level
EMS data
EMI data
Parameter
Parameter
V
LQFP64 package
conforming to SAE J
1752/3
33
=3.3 V, T
Conditions
DD
A
and V
=+25°C,
SS
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
frequency band
V
conforms to IEC 1000-4-2
V
conforms to IEC 1000-4-4
33
33
Monitored
=3.3 V, T
=3.3 V, T
A
A
Conditions
=+25°C, f
=+25°C, f
16/ 48
MHz
[f
17
17
11
OSC4M
4
MCLK
MCLK
Max vs.
=32 MHz
=32 MHz
/f
HCLK
MHz
16/8
19
16
11
3
]
STR71xF
Level/
Class
dBµV
Unit
2B
4A
-

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