MC9S08GT8ACFBE Freescale Semiconductor, MC9S08GT8ACFBE Datasheet - Page 283

• Manufacturer Part Number: MC9S08GT8ACFBE
• Description: IC MCU 8K FLASH 1K RAM 44-QFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08GT8ACFBE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 36
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-QFP
• Processor Series: S08GT
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: I2C/SCI/SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 36
• Operating Supply Voltage: 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: M68EVB908GB60E, M68DEMO908GB60E
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• For Use With: M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

A.11
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
5
Supply voltage for program/erase
T ≤ 85°C
T > 85°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
temperatures with V
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
0 < f
0 < f
T
T = 25°C
L
FLASH Specifications
to T
Bus
Bus
H
< 8 MHz
< 20 MHz
= –40°C to +125°C
Characteristic
5
2
(2)
3
DD
3
= 3.0 V, bus frequency = 4.0 MHz.
1
4
(2)
MC9S08GT16A/GT8A Data Sheet, Rev. 1
Table A-15. FLASH Characteristics
(2)
V
Symbol
RI
RI
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
prog
Read
DDBP
DDPE
10,000
2.08
Min
150
1.8
2.1
1.8
15
—
—
5
DD
. These values were measured at room
Chapter 4,
100,000
Typical
20,000
4000
100
9
4
4
6
“Memory.”
Max
6.67
200
3.6
3.6
3.6
3.6
—
—
—
—
—
Electrical Characteristics
cycles
years
Unit
t
t
t
t
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
µs
V
V
V
DD
supply.
283