HD64F3048BF25 Renesas Electronics America, HD64F3048BF25 Datasheet - Page 45

IC H8 MCU FLASH 128K 100QFP

HD64F3048BF25

Manufacturer Part Number
HD64F3048BF25
Description
IC H8 MCU FLASH 128K 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3048BF25

Core Processor
H8/300H
Core Size
16-Bit
Speed
8MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Type
Bus control
Refresh
controller
Symbol
CS
AS
RD
HWR
LWR
WAIT
RFSH
CS
RD
HWR
LWR
7
3
to CS
0
Pin No.
8, 97 to 99,
88 to 91
69
70
71
72
58
87
88
70
71
72
I/O
Output
Output
Output
Output
Output
Input
Output
Output
Output
Output
Output
Name and Function
Chip select: Select signals for areas 7 to 0
Address strobe: Goes low to indicate valid
address output on the address bus
Read: Goes low to indicate reading from
the external address space
High write: Goes low to indicate writing to
the external address space; indicates valid
data on the upper data bus (D
Low write: Goes low to indicate writing to
the external address space; indicates valid
data on the lower data bus (D
Wait: Requests insertion of wait states in
bus cycles during access to the external
address space
Refresh: Indicates a refresh cycle
Row address strobe RAS
strobe signal for DRAM connected to area 3
Column address strobe CAS
address strobe signal for DRAM connected
to area 3; used with 2WE DRAM.
Write enable WE
DRAM connected to area 3; used with
2CAS DRAM.
Upper write UW
DRAM connected to area 3; used with 2WE
DRAM.
Upper column address strobe UCAS
Column address strobe signal for DRAM
connected to area 3; used with 2CAS
DRAM.
Lower write LW
DRAM connected to area 3; used with 2WE
DRAM.
Lower column address strobe LCAS
Column address strobe signal for DRAM
connected to area 3; used with 2CAS
DRAM.
Rev. 3.00 Sep 27, 2006 page 17 of 872
UW: Write enable signal for
UW
UW
LW: Write enable signal for
LW
LW
WE: Write enable signal for
WE
WE
RAS
RAS: Row address
RAS
Section 1 Overview
REJ09B0325-0300
CAS
CAS: Column
CAS
7
15
to D
to D
UCAS
UCAS:
UCAS
LCAS:
LCAS
LCAS
0
).
8
).

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