SI3586DV-T1-GE3 Vishay, SI3586DV-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI3586DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3586DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1.1V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 1.1V
• Power Dissipation Pd: 830mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3586DV-T1-GE3TR

Si3586DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.2
0.1
0.0
0.1
10
- 50
1
0.00
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
I
T
D
= 150 °C
0.4
J
= 250 µA
25
- Temperature (°C)
50
0.6
75
0.8
0.01
T
0.1
10
J
100
1
0.1
= 25 °C
Limited by
r
DS(on)
* V
1.0
Safe Operating Area, Junction-to-Case
125
GS
New Product
> minimum V
V
150
DS -
1.2
Single Pulse
T
Drain-to-Source Voltage (V)
C
1
= 25 °C
GS
at which r
DS(on)
10
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
is specified
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
1 ms
10 ms
100 ms
dc
1 s
10 s
V
100
1
GS
0.1
- Gate-to-Source Voltage (V)
Time (sec)
2
I
D
= 3.4 A
S-60422-Rev. C, 20-Mar-06
Document Number: 72310
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