SI3586DV-T1-GE3 Vishay, SI3586DV-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI3586DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3586DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1.1V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 1.1V
• Power Dissipation Pd: 830mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3586DV-T1-GE3TR

Si3586DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
6
0.75
0.60
0.45
0.30
0.15
0.00
6.5
5.2
3.9
2.6
1.3
0.0
8
7
6
5
4
3
2
1
0
0
0
0
V
I
D
1
DS
On-Resistance vs. Drain Current
= 2.5 A
V
1
= 10 V
GS
1
V
DS
Output Characteristics
= 1.8 V
2
V
Q
- Drain-to-Source Voltage (V)
GS
g
I
D
2
- Total Gate Charge (nC)
= 5 thru 2.5 V
Gate Charge
- Drain Current (A)
3
2
2 V
4
3
3
5
4
1.5 V
V
V
GS
GS
6
= 2.5 V
4
= 4.5 V
5
7
New Product
5
6
8
1.6
1.4
1.2
1.0
0.8
0.6
650
520
390
260
130
8
7
6
5
4
3
2
1
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 2.5 A
0.5
V
= 4.5 V
V
4
GS
T
DS
Transfer Characteristics
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
oss
25
Capacitance
1.0
8
C
50
S-60422-Rev. C, 20-Mar-06
T
iss
Document Number: 72310
C
= - 55 °C
25 °C
1.5
12
75
C
rss
100
2.0
16
125 °C
125
150
2.5
20