SI3586DV-T1-GE3 Vishay, SI3586DV-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI3586DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3586DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1.1V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 1.1V
• Power Dissipation Pd: 830mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3586DV-T1-GE3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72310
S-60422-Rev. C, 20-Mar-06
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.1
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
T
V
0.3
J
SD
= 150 °C
0
I
D
- Source-to-Drain Voltage (V)
= 250 µA
T
Threshold Voltage
J
25
- Temperature (°C)
0.6
50
0.9
75
T
J
= 25 °C
0.01
0.1
10
100
1
0.1
1.2
Limited by
r
DS(on)
* V
125
Safe Operating Area, Junction-to-Case
GS
New Product
> minimum V
150
V
1.5
DS -
Single Pulse
T
C
Drain-to-Source Voltage (V)
1
= 25 °C
GS
at which r
DS(on)
10
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
1 ms
10 ms
100 ms
1 s
10 s
dc
100
V
1
GS
0.1
- Gate-to-Source Voltage (V)
Time (sec)
2
I
Vishay Siliconix
D
= 2.5 A
1
3
Si3586DV
www.vishay.com
4
10
30
5
7