SI3586DV-T1-GE3 Vishay, SI3586DV-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI3586DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3586DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1.1V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 1.1V
• Power Dissipation Pd: 830mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3586DV-T1-GE3TR

Si3586DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72310.
www.vishay.com
8
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
New Product
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
S-60422-Rev. C, 20-Mar-06
t
Document Number: 72310
2
DM
Z
thJA
thJA
100
(t)
t
t
1
2
= 130 °C/W
600
10