GA100TS60U Vishay, GA100TS60U Datasheet
GA100TS60U
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GA100TS60U Summary of contents
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... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT θJC R Thermal Resistance, Junction-to-Case - Diode θJC R Thermal Resistance, Case-to-Sink - Module θCS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA100TS60U Ultra-Fast Max. 600 100 200 200 200 ±20 2500 320 170 ...
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Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance „ Collector-to-Emitter Leaking Current CES V Diode ...
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Square wave: 60 60% of rated voltage 40 I Ideal diodes 20 0 0.1 Fig Typical Load Current vs. Frequency 1000 ° J 100 V GE 20µs PULSE WIDTH 10 0.8 1.2 ...
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T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 Single Pulse (Thermal Resistance) ...
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1MHz ies res 16000 oes ies 12000 8000 C oes 4000 C res ...
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R = Ohm 150 C ° 15V 120 I , Collector-to-emitter Current (A) C Fig ...
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V = 360V 125° 25°C J 200 160 120 80 500 1000 1500 di /dt - (A/µs) f Fig Typical Reverse Recovery vs. di www.irf.com 150 I = 200A F I ...
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Fig Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90% Ic ...
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Figure 21. Figure 22. www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT ...
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Notes: Repetitive rating 20V, pulse width limited by GE max. junction temperature. ‚ See fig. 17 ƒ For screws M6. „ For screws M5. … Pulse width 50µs; single shot. Case Outline — INT-A-PAK 80.30 [ 3.161 ...