GA100TS60U Vishay, GA100TS60U Datasheet - Page 5

• Manufacturer Part Number: GA100TS60U
• Description: IGBT FAST 600V 100A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA100TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 9.837nF @ 30V
• Power - Max: 320W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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Fig. 9 - Typical Switching Losses vs. Gate
20000
16000
12000
8000
4000
18
16
14
12
10
8
10
0
Fig. 7 - Typical Capacitance vs.
V
V
T
1
I
J
C
Collector-to-Emitter Voltage
CC
GE
= 25 C
= 360V
= 15V
= 100A
V
R
CE
G
°
20
V
C
C
C
, Gate Resistance (Ohm)
Resistance
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
C res
C ies
C oes
=
=
=
=
0V,
C
C
C
ge
gc
ce
+ C
+ C
30
10
f = 1MHz
gc ,
gc
C
ce
(Ω)
40
SHORTED
100
50
100
10
1
-60 -40 -20
Fig. 10 - Typical Switching Losses vs.
20
16
12
8
4
0
R
V
V
0
GE
CC
G
Fig. 8 - Typical Gate Charge vs.
V
I
CC
C
= 15V
= 360V
= Ohm
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
= 400V
= 66A
Ω
Junction Temperature
J
100
Q , Total Gate Charge (nC)
G
0
20 40
200
Ω
60
300
80 100 120 140 160
I =
I =
I =
C
C
C
°
400
200
100
50
A
A
A
5
500