GA100TS60U Vishay, GA100TS60U Datasheet - Page 4

• Manufacturer Part Number: GA100TS60U
• Description: IGBT FAST 600V 100A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA100TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 9.837nF @ 30V
• Power - Max: 320W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

Fig. 4 - Maximum Collector Current vs. Case
4
120
100
80
60
40
20
0.01
0
0.1
0.0001
25
1
Fig. 6
D = 0.50
50
T , Case Temperature (
C
0.02
0.01
0.20
0.10
0.05
Temperature
0.001
75
(Thermal Resistance)
Single Pulse
100
t , Rectangular Pulse Duration (Seconds)
0.01
1
°
125
C)
150
0.1
Fig. 5 - Typical Collector-to-Emitter Voltage
2.5
2.0
1.5
1.0
1
-60 -40 -20
V
80 us PULSE WIDTH
vs. Junction Temperature
GE
N otes:
1. D uty factor D = t / t
2. Peak T = P
= 15V
T , Junction Temperature ( C)
J
0
J
10
20 40 60 80 100 120 140 160
DM
x Z
1
thJC
2
P
DM
+ T
100
www.irf.com
C
I =
I =
I =
t
C
C
C
1
t 2
200
100
50
°
A
A
A
1000