GA100TS60U Vishay, GA100TS60U Datasheet - Page 3

• Manufacturer Part Number: GA100TS60U
• Description: IGBT FAST 600V 100A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA100TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 9.837nF @ 30V
• Power - Max: 320W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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1000
100
100
10
80
60
40
20
0
0.8
Fig. 2 - Typical Output Characteristics
0.1
Square wave:
V
CE
1.2
, Collector-to-Emitter Voltage (V)
60% of rated
Ideal diodes
I
voltage
T = 25 C
J
1.6
°
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
= 15 V
(Load Current = I
2.0
T = 125 C
J
1
°
2.4
f, Frequency (KHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
1
5
V
GE
10
6
, Gate-to-Emitter Voltage (V)
T = 125 C
J
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation =
J
sink
= 90°C
o
7
T = 25 C
J
V
5µs PULSE WIDTH
CC
CE
o
= 50V
W
8
100
3
9