FDY302NZ Fairchild Semiconductor, FDY302NZ Datasheet

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FDY302NZ

Manufacturer Part Number
FDY302NZ
Description
MOSFET N-CH 20V SC-89-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDY302NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
60pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-3, SOT-523F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY302NZ
Manufacturer:
TOS
Quantity:
50
Part Number:
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Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
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Part Number:
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FDY302NZ
Single N-Channel 2.5V Specified PowerTrench
General Description
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
Applications
• Li-Ion Battery Pack
©2006 Fairchild Semiconductor Corporation
FDY302NZ Rev A
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DS
GS
D
J
θJA
θJA
, T
D
Device Marking
STG
E
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (Steady State)
Operating and Storage Junction Temperature
Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
– Continuous
– Pulsed
FDY302NZ
DS(ON)
Parameter
Device
1 S
@ V
GS
= 2.5V.
T
A
G
=25
Reel Size
o
C unless otherwise noted
7 ’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Features
• 600 mA, 20 V R
• ESD protection diode (note 3)
• RoHS Compliant
® ® ® ®
MOSFET
G
S
Tape width
8 mm
1
2
–55 to +150
R
Ratings
DS(ON)
DS(ON)
1000
± 12
446
280
600
625
200
20
= 300 mΩ @ V
= 500 mΩ @ V
July 2006
GS
GS
www.fairchildsemi.com
3000 units
3
Quantity
= 2.5 V
= 4.5 V
D
Unit
°C/W
mW
°C
mA
s
V
V

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FDY302NZ Summary of contents

Page 1

... Thermal Characteristics Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device E FDY302NZ ©2006 Fairchild Semiconductor Corporation FDY302NZ Rev A ® ® ® ® Features • 600 mA 2.5V. GS • ESD protection diode (note 3) • RoHS Compliant =25 ...

Page 2

... Diode Reverse Recovery Charge rr Notes the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of θJA the drain pins guaranteed by design while R θJC a) FDY302NZ Rev 25°C unless otherwise noted A Test Conditions = 250 µ 250 µ ...

Page 3

... Figure 3. On-Resistance Variation with Temperature. 1 -55 A 1.2 0.9 0.6 0.3 0 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDY302NZ Rev A 2.6 2 2.2 2.0V 2 1.8 1.6 1.4 1.2 1 0.8 0 0.75 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.9 0.8 0.7 ...

Page 4

... D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY302NZ Rev A 100 15V rss 0 0.8 ...

Page 5

... NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY302NZ Rev A 0.50 1.70 1.14 1.50 0.50 LAND PATTERN RECOMMENDATION 0.78 0.58 SEE DETAIL A ...

Page 6

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...

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