FDY302NZ Fairchild Semiconductor, FDY302NZ Datasheet - Page 4

• Manufacturer Part Number: FDY302NZ
• Description: MOSFET N-CH 20V SC-89-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY302NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3, SOT-523F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
FDY302NZ Rev A
0.01
0.1
0.01
Figure 9. Maximum Safe Operating Area.
10
5
4
3
2
1
0
0.1
1
Figure 7. Gate Charge Characteristics.
0.0001
0.1
1
0
I
R
D
SINGLE PULSE
R
DS(ON)
= 600mA
θ JA
D = 0.5
V
T
GS
0.2
A
0.1
= 280
0.05
= 25
LIMIT
0.02
= 4.5V
0.01
0.2
o
o
C
C/W
SINGLE PULSE
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.001
Q
1
g
, GATE CHARGE (nC)
0.4
V
1s
DS
DC
= 5V
Figure 11. Transient Thermal Response Curve.
10s
100ms
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
10V
0.6
10ms
0.01
10
15V
1ms
0.8
0.1
100
1
t
1
, TIME (sec)
100
90
80
70
60
50
40
30
20
10
30
25
20
15
10
0.0001
0
5
0
0
Figure 8. Capacitance Characteristics.
1
C
Figure 10. Single Pulse Maximum
rss
0.001
4
V
C
Power Dissipation.
DS
oss
0.01
, DRAIN TO SOURCE VOLTAGE (V)
10
8
t
0.1
1
, TIME (sec)
C
iss
P(pk)
Duty Cycle, D = t
T
1
R
J
R
12
θJA
- T
θJA
(t) = r(t) * R
100
www.fairchildsemi.com
A
t
=280 ° C/W
1
= P * R
t
10
2
SINGLE PULSE
R
θ JA
T
A
= 280° C/W
θJA
16
= 25° C
θJA
1
100
(t)
/ t
V
f = 1MHz
2
GS
= 0 V
1000
1000
20