FDY302NZ Fairchild Semiconductor, FDY302NZ Datasheet - Page 3

• Manufacturer Part Number: FDY302NZ
• Description: MOSFET N-CH 20V SC-89-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY302NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3, SOT-523F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
FDY302NZ Rev A
1.6
1.4
1.2
0.8
0.6
1.5
1.2
0.9
0.6
0.3
0.8
0.6
0.4
0.2
1
Figure 3. On-Resistance Variation with
0
1
0
-50
Figure 1. On-Region Characteristics.
0.5
0
Figure 5. Transfer Characteristics.
I
V
V
D
V
DS
GS
= 600mA
GS
-25
= 5V
= 4.5V
= 4.5V
3.5V
1
V
0.25
V
T
GS
0
J
DS
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
3.0V
25
1.5
2.5V
0.5
50
T
A
= -55
2
75
o
C
125
0.75
o
100
C)
o
C
2.5
2.0V
25
125
o
C
150
1
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
2
1
1
1
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
= 0V
= 2.0V
Gate-to-Source Voltage.
0.2
V
0.2
SD
V
GS
T
, BODY DIODE FORWARD VOLTAGE (V)
2
A
, GATE TO SOURCE VOLTAGE (V)
= 125
2.5V
T
A
I
0.4
D
= 25
o
, DRAIN CURRENT (A)
C
0.4
o
C
3.0V
25
3
0.6
o
T
C
A
= 125
0.6
www.fairchildsemi.com
-55
o
3.5V
C
0.8
o
C
4
0.8
I
D
= 300mA
1
4.5V
1.2
1
5