FDH45N50F_F133 Fairchild Semiconductor, FDH45N50F_F133 Datasheet

MOSFET N-CH 500V 50A TO-247

FDH45N50F_F133

Manufacturer Part Number
FDH45N50F_F133
Description
MOSFET N-CH 500V 50A TO-247
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDH45N50F_F133

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 22.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
137nC @ 10V
Input Capacitance (ciss) @ Vds
6630pF @ 25V
Power - Max
625W
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDH45N50F_F133FDH45N50F-F133
Quantity:
2 500
©2008 Fairchild Semiconductor Corporation
FDH45N50F_F133 Rev. C
FDH45N50
500V N-Channel MOSFET, FRFET
Features
• 45A, 500V, R
• Low gate charge ( typical 105 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 62 pF)
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
= 0.12Ω @V
G
F_F133
D
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
TO-247
FDH Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
FDH45N50F_F133
Min.
0.24
--
--
-55 to +150
G
1868
28.4
62.5
500
180
±30
625
300
45
45
50
5
Max.
S
0.2
UniFET
40
--
D
October 2008
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
mJ
mJ
°C/W
°C/W
°C/W
°C
°C
W
V
A
A
A
V
A
TM

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FDH45N50F_F133 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FDH45N50F_F133 Rev. C Description = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... DD G ≤ 45A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDH45N50F_F133 Rev. C Package Reel Size TO-247 - T = 25°C unless otherwise noted C Conditions 250μA ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 12000 10000 C oss 8000 C iss 6000 4000 C rss 2000 Drain-Source Voltage [V] DS FDH45N50F_F133 Rev. C Figure 2. Transfer Characteristics Notes : ∝ 1. 250 レ s Pulse Test 25∩ Figure 4. Body Diode Forward Voltage Variation vs. Source Current 20V GS Note : T = 25∩ ...

Page 4

... Drain-Source Voltage [V] DS Figure 11. Typical Drain Current Slope vs. Gate Resistance 4,000 3,500 3,000 2,500 di/dt(on) 2,000 1,500 di/dt(off) 1,000 500 Gate resistance [ G FDH45N50F_F133 Rev. C (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 10 ...

Page 5

... Typical Performance Characteristics Figure 13. Typical Switching Losses vs. Gate Resistance 1,000 800 600 400 200 Gate resistance [ G Figure 15. Transient Thermal Resistance Curve - FDH45N50F_F133 Rev. C (Continued) Figure 14. Unclamped Inductive Switching 100 Eoff Starting T 10 Eon Notes : 400 25A 125 0.01 Ω ] D=0.5 0.2 Notes : 0 ...

Page 6

... Mechanical Dimensions FDH45N50F_F133 Rev. C TO-247AB 6 Dimensions in Millimeters www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDH45N50F_F133 Rev. C ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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