FDH45N50F_F133 Fairchild Semiconductor, FDH45N50F_F133 Datasheet - Page 4

• Manufacturer Part Number: FDH45N50F_F133
• Description: MOSFET N-CH 500V 50A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDH45N50F_F133

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 6630pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDH45N50F_F133 Rev. C
Typical Performance Characteristics
4,000
3,500
3,000
2,500
2,000
1,500
1,000
Figure 9. Maximum Safe Operating Area
10
10
10
10
500
Figure 7. Breakdown Voltage Variation
Figure 11. Typical Drain Current Slope
1.2
1.1
1.0
0.9
0.8
-1
2
1
0
10
0
-100
0
0
di/dt(off)
5
-50
Operation in This Area
is Limited by R
vs. Gate Resistance
10
vs. Temperature
di/dt(on)
V
T
J
DS
15
, Junction Temperature [
10
, Drain-Source Voltage [V]
R
0
DS(on)
1
G
, Gate resistance [
20
50
25
DC
30
100 ms
∝
100
10
Ω
1. T
2. T
3. Single Pulse
10 ms
Notes :
2
]
o
35
C]
C
J
= 150
= 25
1 ms
Notes :
1. V
2. I
o
100
C
o
D
C
40
GS
= 250
150
= 0 V
μ
Notes :
1. V
2. V
3. I
4. T
s
10
μ
D
A
DS
GS
J
= 25A
45
= 125
μ
= 400 V
= 12 V
s
o
(Continued)
C
200
10
50
3
4
Figure 12. Typical Drain-Source Voltage
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
50
40
30
20
10
45
40
35
30
25
20
15
10
2.5
2.0
1.5
1.0
0.5
0.0
0
25
5
0
-100
0
dv/dt(off)
5
Slope vs. Gate Resistance
vs. Case Temperature
-50
50
10
vs. Temperature
dv/dt(on)
T
T
15
J
C
, Junction Temperature [
, Case Temperature [
R
0
G
, Gate resistance [
75
20
25
50
100
30
100
Ω
o
C]
]
35
o
C]
www.fairchildsemi.com
125
40
Notes :
1. V
2. I
150
Notes :
1. V
2. V
3. I
4. T
D
GS
= 22.5 A
D
J
= 10 V
DS
GS
= 25A
45
= 125
= 400 V
= 12 V
o
C
150
200
50