FDH45N50F_F133 Fairchild Semiconductor, FDH45N50F_F133 Datasheet - Page 3

• Manufacturer Part Number: FDH45N50F_F133
• Description: MOSFET N-CH 500V 50A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDH45N50F_F133

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 6630pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDH45N50F_F133 Rev. C
Typical Performance Characteristics
12000
10000
10
10
10
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8000
6000
4000
2000
Figure 1. On-Region Characteristics
2
1
0
10
0
-1
10
Top :
Bottom :
0
Drain Current and Gate Voltage
-1
15.0 V
10.0 V
5.5 V
20
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
C
C
C
oss
iss
rss
40
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
V
10
D
60
0
GS
, Drain Current [A]
0
= 10V
80
V
GS
100
= 20V
C
C
C
iss
oss
rss
= C
= C
= C
gs
gd
10
ds
10
120
∝
+ C
+ C
1
∝
1
1. 250 レ s Pulse Test
2. T
Notes :
gd
Note : T
gd
* Note :
C
(C
1. V
2. f = 1 MHz
= 25∩
ds
= shorted)
140
GS
J
= 25∩
= 0 V
160
3
10
10
10
10
10
10
12
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
8
6
4
2
0
Figure 6. Gate Charge Characteristics
2
1
0
2
1
0
0.2
2
0
Variation vs. Source Current
0.4
150
25
20
o
o
C
C
4
150∩
0.6
and Temperatue
V
V
GS
Q
SD
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
40
, Total Gate Charge [nC]
0.8
25∩
6
-55
o
V
1.0
C
DS
60
V
DS
= 400V
V
DS
= 250V
8
= 100V
1.2
80
∝
∝
1. V
2. 250 レ s Pulse Test
1. V
2. 250 レ s Pulse Test
1.4
Notes :
Notes :
GS
DS
10
www.fairchildsemi.com
= 0V
= 40V
Note : I
100
1.6
D
= 48A
12
1.8
120