FDH45N50F_F133 Fairchild Semiconductor, FDH45N50F_F133 Datasheet - Page 2

• Manufacturer Part Number: FDH45N50F_F133
• Description: MOSFET N-CH 500V 50A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDH45N50F_F133

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 137nC @ 10V
• Input Capacitance (ciss) @ Vds: 6630pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDH45N50F_F133 Rev. C
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.46mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
ΔBV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FDH45N50F_F133
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
oss
oss
g
gs
gd
rr
DSS
ΔT
≤ 45A, di/dt ≤ 200A/μs, V
DSS
eff.
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 48A, V
DD
= 50V, R
DD
FDH45N50F_F133
≤ BV
Parameter
Device
DSS
G
= 25Ω, Starting T
, Starting T
J
= 125°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-247
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250μA, Referenced to 25°C
/dt =100A/μs
= 25Ω
= 500V, V
= 400V, T
= V
= 40V, I
= 25V, V
= 400V, V
= 0V to 400V, V
= 400V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 250V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 250μA
= 45A
= 45A
GS
DS
D
D
DS
C
= 22.5A
= 22.5A
GS
= 250μA
GS
= 48A
= 48A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
= 0V, f = 1.0MHz
GS
-
= 0V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
500
-
3.0
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Typ.
0.105
5100
49.0
0.64
790
161
342
140
500
215
245
105
188
0.5
62
33
45
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Quantity
Max Units
6630
1030
1010
-100
0.12
www.fairchildsemi.com
250
100
290
440
500
137
180
5.0
1.4
25
45
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30
V/°C
μA
μA
nA
nA
nC
nC
nC
μC
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V