BUK6607-55C,118 NXP Semiconductors, BUK6607-55C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK6607-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6607-55C,118

• Input Capacitance (ciss) @ Vds: 5160pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6607-55C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
g
(S)
R
(m Ω )
fs
120
DSon
90
60
30
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
T
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
j
Characteristics
= 25°C; V
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
5
DS
= 25 V
…continued
40
10
60
15
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
V
003aaf007
DS
003aae891
I
GS
= 25 A; V
= 20 A; dI
D
(A)
Figure 16
= 25 V
(V)
80
20
Rev. 1 — 14 October 2010
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel TrenchMOS logic and standard level FET
Fig 6.
Fig 8.
j
= 25 °C;
(A)
I
D
100
(A)
I
80
60
40
20
D
80
60
40
20
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
T
Output characteristics: drain current as a
Transfer characteristics: drain current as a
GS
0
0
j
= 25°C; t
= 0 V;
V
GS
(V) = 10
0.5
p
T
j
= 300 μs
= 175 ° C
2
5
4.5
BUK6607-55C
Min
-
-
-
1
T
4
Typ
0.8
48
86
j
= 25 ° C
1.5
© NXP B.V. 2010. All rights reserved.
V
003aae928
GS
003aae892
V
DS
(V)
Max
1.2
-
-
3.6
3.8
3.4
3.2
4
(V)
2
6
Unit
V
ns
nC
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