BUK6607-55C,118 NXP Semiconductors, BUK6607-55C,118 Datasheet - Page 4

• Manufacturer Part Number: BUK6607-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6607-55C,118

• Input Capacitance (ciss) @ Vds: 5160pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6607-55C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
D
10
10
10
120
100
10
80
60
40
20
-1
3
2
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
Limit R
(1)
DSon
50
= V
DS
/ I
D
100
150
All information provided in this document is subject to legal disclaimers.
T
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Rev. 1 — 14 October 2010
N-channel TrenchMOS logic and standard level FET
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
10
2
50
BUK6607-55C
100
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
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10
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