BUK6607-55C,118 NXP Semiconductors, BUK6607-55C,118 Datasheet - Page 8

• Manufacturer Part Number: BUK6607-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6607-55C,118

• Input Capacitance (ciss) @ Vds: 5160pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6607-55C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
(A)
R
(m Ω )
I
D
10
10
10
10
10
10
DSon
25
20
15
10
-1
-2
-3
-4
-5
-6
5
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
3.8
50
1
4.0
100
min
4.5
2
typ
V
150
GS
max
(V) = 5
3
200
All information provided in this document is subject to legal disclaimers.
003aad806
V
003aaf008
GS
I
6.0
10.0
D
(V)
(A)
250
Rev. 1 — 14 October 2010
4
N-channel TrenchMOS logic and standard level FET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
4
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
max
min
typ
BUK6607-55C
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aad805
003aad803
T
T
j
j
(°C)
(°C)
180
180
8 of 14