BUK6E2R3-40C,127 NXP Semiconductors, BUK6E2R3-40C,127 Datasheet - Page 11

• Manufacturer Part Number: BUK6E2R3-40C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E2R3-40C,127

• Input Capacitance (ciss) @ Vds: 15100pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT226 (I2PAK)
BUK6E2R3-40C
Product data sheet
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT226
4.5
4.1
A
1.40
1.27
A
1
0.85
0.60
b
IEC
D
L
b
1.3
1.0
1
D
1
b
1
0.7
0.4
c
All information provided in this document is subject to legal disclaimers.
TO-262
JEDEC
1
max
e
11
D
E
REFERENCES
2
e
Rev. 1 — 18 August 2010
1.6
1.2
D
1
3
0
b
10.3
9.7
E
L
JEITA
scale
1
5
2.54
e
10 mm
15.0
13.5
N-channel TrenchMOS intermediate level FET
L
mounting
base
3.30
2.79
A
L
1
1
Q
2.6
2.2
Q
A
BUK6E2R3-40C
PROJECTION
EUROPEAN
c
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
06-02-14
09-08-25
SOT226
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