BUK6E2R3-40C,127 NXP Semiconductors, BUK6E2R3-40C,127 Datasheet - Page 9

• Manufacturer Part Number: BUK6E2R3-40C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E2R3-40C,127

• Input Capacitance (ciss) @ Vds: 15100pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6E2R3-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Source current as a function of source-drain voltage; typical values
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
(A)
I
S
100
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
003aaa508
Rev. 1 — 18 August 2010
0.3
T
j
= 175 °C
0.6
Fig 14. Gate-source voltage as a function of gate
V
(V)
GS
N-channel TrenchMOS intermediate level FET
10
0.9
8
6
4
2
0
T
charge; typical values
j
0
= 25 °C
003aae255
V
SD
(V)
1.2
100
14V
BUK6E2R3-40C
200
V
© NXP B.V. 2010. All rights reserved.
DS
Q
G
003aae254
= 32V
(nC)
300
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