BUK6E2R3-40C,127 NXP Semiconductors, BUK6E2R3-40C,127 Datasheet - Page 5

• Manufacturer Part Number: BUK6E2R3-40C,127
• Description: MOSFET N-CH TRENCH I2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6E2R3-40C,127

• Input Capacitance (ciss) @ Vds: 15100pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 306W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK6E2R3-40C
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
δ = 0.5
0.05
0.02
0.2
single shot
0.1
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Conditions
see
vertical in free air
Rev. 1 — 18 August 2010
Figure 4
10
-3
N-channel TrenchMOS intermediate level FET
10
-2
BUK6E2R3-40C
Min
-
-
10
P
-1
t
Typ
-
60
p
T
t
p
© NXP B.V. 2010. All rights reserved.
003aae269
(s)
δ =
Max
0.49
-
T
t
p
t
1
Unit
K/W
K/W
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