BUK6E2R3-40C,127 NXP Semiconductors, BUK6E2R3-40C,127 Datasheet - Page 14

MOSFET N-CH TRENCH I2PACK

BUK6E2R3-40C,127

Manufacturer Part Number
BUK6E2R3-40C,127
Description
MOSFET N-CH TRENCH I2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK6E2R3-40C,127

Input Capacitance (ciss) @ Vds
15100pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Power - Max
306W
Mounting Type
*
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.3 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
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10. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BUK6E2R3-40C
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 August 2010
salesaddresses@nxp.com
9.4
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
N-channel TrenchMOS intermediate level FET
Trademarks
BUK6E2R3-40C
© NXP B.V. 2010. All rights reserved.
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